Gehäuse | FBGA-90 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | 0 C~+70 C |
Geschwindigkeit | 133 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Bit Organization | x32 |
Package Material | lead & halogen free |
Hynix Memory | H |
No Of Banks | 4 banks |
Die Generation | 8th |
Product Family | DRAM |
Product Mode | SDR |
Shipping Method | tray |
Teilenummer | Menge | Datecode | |
---|---|---|---|
H57V2622GMR-75C | 1.305 | Anfrage senden | |
H57V2622GMR-75C | 30 | Anfrage senden | |
H57V2622GMR-75C | 3.028 | 11+ | Anfrage senden |
H57V2622GMR-75C | 10.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EDS2532AA-75-E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AAABH-75 | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AABH-75 | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AABH-75-E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AABH-75-E PB FREE | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AABH-75L-E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AABJ-75 | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AABJ-75-E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AABJ-75-E SDRAM 2M | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
EDS2532AABJ75LE | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |