| Gehäuse |
FBGA-78
|
| Verpackung |
TRAY
|
| RoHS |
RoHS
|
| Spannungsversorgung |
1.2 V
|
| Betriebstemperatur |
0 C~+85 C
|
| Geschwindigkeit |
2400 MBPS
|
| Standard Stückzahl |
|
| Abmessungen Karton |
|
| Number Of Words |
1G
|
| Bit Organization |
x8
|
| Density |
8G
|
| Operating Temperature |
commercial temperature(0°C ~ 85°C) & reduced IDD6
|
| Package Material |
lead & halogen free(ROHS compliant)
|
| Hynix Memory |
H
|
| Die Generation |
1st
|
| No Of Banks |
Non-TSV
|
| Product Family |
DRAM
|
| Shipping Method |
tray
|
Description
The H5AN8G4NMFR-xxC and H5AN8G8NMFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and
high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising
and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the
CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising
and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high
bandwidth.
