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Hersteller-Nummer | K4B4G1646D-BYMA1.0 |
Hersteller | SAMSUNG |
Produktkategorie | DDR3 SDRAM |
IC-Code | 256MX16 DDR3 |
Gehäuse | FBGA-96 |
Verpackung | TRAY |
RoHS | Leaded |
Spannungsversorgung | 1.5 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 1866 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 5th Generation |
Power | Low VDD(1.35V) |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4B4G1646D-BYMA1.0 | 21.000 | 2021+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT41J256M16HA-107G:E | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
MT41J256M16RE-107 | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
MT41J256M16RE-107 ES:D | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
MT41J256M16RE-107:D | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
MT41J256M16RE-107G ES:D | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
MT41J256M16RE-107G:D | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |