K4E151611DT-6
Produktbeschreibung
| Gehäuse | TSOP2(44/50) |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 5.0 V |
| Betriebstemperatur | 0 C~+70 C |
| Geschwindigkeit | 60 NS |
| Standard Stückzahl | |
| Abmessungen Karton |
DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| AS4C1M16E5-60JTC | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16E5-60T1 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16E5-60TC | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16E5-60TC TR | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16E5-60TC X | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16E5-60TCN | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16E5-60TCTR | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16E50-60TC | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16EO-60TC | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16EO-60TCN | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |