K4E151611DT60T

Produktübersicht

IC Picture

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Hersteller-Nummer K4E151611DT60T
Hersteller SAMSUNG
Produktkategorie DRAM
IC-Code 1MX16 EDO

Produktbeschreibung

Gehäuse TSOP2(44/50)
Verpackung TAPE ON REEL
RoHS Leaded
Spannungsversorgung 5.0 V
Betriebstemperatur 0 C~+70 C
Geschwindigkeit 60 NS
Standard Stückzahl
Abmessungen Karton

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

Verfügbare Angebote

Teilenummer Menge Datecode
K4E151611DT60T 3.000 00+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
GM71C18163C-6 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163C16 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163CF-60T TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163CG6 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163CH6 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163CLT-6 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163CT 6 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163CT-5 #160 #160 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163CT-5/6 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C
GM71C18163CT-6 TSOP2(44/50) 5.0 V 60 NS 0 C~+70 C