Bilder dienen nur der Illustration
Hersteller-Nummer | K4H510838B-TICC |
Hersteller | SAMSUNG |
Produktkategorie | DDR1 SDRAM |
IC-Code | 64MX8 DDR1 |
Gehäuse | TSOP2(66) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 2.5 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 200 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 3rd Generation |
Power | Normal Power |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EDD5108AGTA-5BLI-E | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
EDD5108AGTA-5CLI-E | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
IS43R86400D -5TI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
IS43R86400D -5TLA1 | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
IS43R86400D-5TLI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
IS43R86400E -5TI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
IS43R86400E -5TLA1 | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
IS43R86400E-5TLI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
IS43R86400F -5TI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
IS43R86400F -5TLA1 | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |