Gehäuse | TSOP2(54) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 133 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 16M |
Bit Organization | x16 |
Density | 256M |
Internal Banks | 4 Banks |
Generation | 7th Generation |
Power | Low Power |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4S561632E-TC1616 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC60/75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC7 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC75 #160 #16 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC75 SA | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC75 SAMSUNG | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC75 TSOP54 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S561632E-TC75, -TL75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |