Bilder dienen nur der Illustration
Hersteller-Nummer | K4S643233H-HN75 |
Hersteller | SAMSUNG |
Produktkategorie | SDRAM MOBILE |
IC-Code | 2MX32 SD |
Andere Bezeichnungen | K4S643233H-HN750 |
K4S643233HHN75000 | |
K4S643233HHN750CV | |
K4S643233HHN750JR |
Gehäuse | FBGA-90 |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 3.0V/3.3V |
Betriebstemperatur | -40 C~+125 C |
Geschwindigkeit | 133 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Low, i-TCSR |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4S643233H-HN75 | 6.500 | Anfrage senden | |
K4S643233H-HN75 | 12.500 | Anfrage senden | |
K4S643233H-HN75 | 100 | Anfrage senden | |
K4S643233H-HN75 | 500 | 4 | Anfrage senden |
K4S643233H-HN75 | 17.000 | Anfrage senden | |
K4S643233H-HN75 | 729 | 200601+ | Anfrage senden |
K4S643233H-HN75 | 2.000 | 2007+ | Anfrage senden |
K4S643233H-HN75 | 891 | 200601+ | Anfrage senden |
K4S643233H-HN75 | 2.592 | Anfrage senden | |
K4S643233H-HN75 | 77 | Anfrage senden |