K4T1G084QE-HCE6

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T1G084QE-HCE6
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 128MX8 DDR2
Andere Bezeichnungen K4T1G084QE-HCE60
K4T1G084QE-HCE600
K4T1G084QE-HCE6000
K4T1G084QE-HCE60000
K4T1G084QE-HCE6T
K4T1G084QE-HCE6T00

Produktbeschreibung

Gehäuse FBGA-60
Verpackung
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 667 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 128M
Bit Organization x8
Density 1G
Internal Banks 8 Banks
Generation 6th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T1G084QE-HCE6 116 1104+ Anfrage senden
K4T1G084QE-HCE6 3.840 10+ Anfrage senden
K4T1G084QE-HCE6 272 10+ Anfrage senden
K4T1G084QE-HCE6 3.840 10 Anfrage senden
K4T1G084QE-HCE6 5.660 Anfrage senden
K4T1G084QE-HCE6 12.500 Anfrage senden
K4T1G084QE-HCE6 100 Anfrage senden
K4T1G084QE-HCE6 4.789 2012+ Anfrage senden
K4T1G084QE-HCE6 5.000 9 Anfrage senden
K4T1G084QE-HCE6 2.440 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
MT47H128M8HQ37E FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HQ3:G OR HQ25:G FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HQ3E FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HV-3 FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HV-37E FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HV-37E:E FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HV-3:E FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HV-3:G FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HV-3E FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8HV-3G FBGA-60 1.8 V 667 MBPS 0 C~+85 C