Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G084QE-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 128MX8 DDR2 |
Andere Bezeichnungen | K4T1G084QE-HCE60 |
K4T1G084QE-HCE600 | |
K4T1G084QE-HCE6000 | |
K4T1G084QE-HCE60000 | |
K4T1G084QE-HCE6T | |
K4T1G084QE-HCE6T00 |
Gehäuse | FBGA-60 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G084QE-HCE6 | 116 | 1104+ | Anfrage senden |
K4T1G084QE-HCE6 | 3.840 | 10+ | Anfrage senden |
K4T1G084QE-HCE6 | 272 | 10+ | Anfrage senden |
K4T1G084QE-HCE6 | 3.840 | 10 | Anfrage senden |
K4T1G084QE-HCE6 | 5.660 | Anfrage senden | |
K4T1G084QE-HCE6 | 12.500 | Anfrage senden | |
K4T1G084QE-HCE6 | 100 | Anfrage senden | |
K4T1G084QE-HCE6 | 4.789 | 2012+ | Anfrage senden |
K4T1G084QE-HCE6 | 5.000 | 9 | Anfrage senden |
K4T1G084QE-HCE6 | 2.440 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4T1G084QD-ZLE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QD/E-HCE60MJ/00 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QD/E/Q-HCE60MJ/00 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QD0-ZCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QE-BCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QE-HCE6/HCF7 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QE-HCLE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QE-HLE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QE-ZCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G084QE/D-HCE6/0MJ/000 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |