K4T51083QI-HCE6TQ0
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51083QI-HCE6TQ0 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX8 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-60 |
| Verpackung | TAPE ON REEL |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | 2000 |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 10th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51083QI-HCE6TQ0 | 20.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| MT47H64M8B6-37EESD | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-37ELD | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-3: | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-3:B | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-3:D | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-3:D | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-3:D TR | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-3E | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-3E:D | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M8B6-3ED | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |