K4T511638G-HCE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T511638G-HCE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 8th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T511638G-HCE6 | 3.840 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| MT47H32M16B63 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BG-5E:B | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BN-0 MS:D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BN-25 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BN-25 ES:D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BN-25:D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BN-25D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BN-25E ES:D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BN-25E:D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H32M16BN-25ED | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |