Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163KUG-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Power | Low, i-TCSR & PASR & DS |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H32M16BT-3E ES | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16BT-3E ES:A | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16BT-3E:A | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16BT-5E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16BT-5E ES | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16BT-5E ES:A | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16BT5E:A | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16CC-0 MS:B | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16CC-25E ES:B | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16CC-25E:B | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |