Gehäuse |
TSOP-48
|
Verpackung |
|
RoHS |
Leaded
|
Spannungsversorgung |
2.7V~3.6V
|
Betriebstemperatur |
0 C~+70 C
|
Geschwindigkeit |
90 NS
|
Standard Stückzahl |
|
Abmessungen Karton |
|
SUMMARY DESCRIPTION
The M29W200B is a 2 Mbit (256Kb x8 or 128Kb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode where it can be read in the same way
as a ROM or EPROM. The M29W200B is fully
backward compatible with the M29W200.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are written to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.