| Gehäuse |
FBGA-78
|
| Verpackung |
TRAY
|
| RoHS |
RoHS
|
| Spannungsversorgung |
1.5 V
|
| Betriebstemperatur |
0 C~+95 C
|
| Geschwindigkeit |
1866 MBPS
|
| Standard Stückzahl |
1600
|
| Abmessungen Karton |
|
| Number Of Words |
2G
|
| Bit Organization |
x4
|
| Density |
8G
|
| Operating Temperature |
commercial temperature(0°C~85°C) & normal power
|
| Package Material |
lead & halogen free(ROHS compliant)
|
| Hynix Memory |
H
|
| Die Generation |
3rd
|
| No Of Banks |
8 banks
|
| Product Family |
DRAM
|
| Shipping Method |
tray
|
Description
The H5TQ8G43AMR-xxC and H5TQ8G83AMR-xxC are a 8Gb normal power Double Data Rate III (DDR3)
Synchronous DRAM, ideally suited for the main memory applications which requires large memory density
and high bandwidth and normal power operation at 1.5V.
SK hynix 8Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges
of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges
of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of
it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
