Special Offers


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K4T51163QJ-BCF7000

32MX16 DDR2 FOR SELL


Qty
18,062
Price
US$ 0.88
 
Datecode 13+
Part No 32MX16 DDR2
Package FBGA
Outpack TRAY
Voltage 1.8 V
Std. Pack Qty 1280
Brand SAMSUNG
Item DDR2 SDRAM
RoHS RoHS
Temperature COMMERCIAL
Speed

K4T51163QJ-BCF7000 : 512Mb J-die DDR2 SDRAM

84FBGA with Lead-Free & Halogen-Free (RoHS compliant)

The 512Mb DDR2 SDRAM is organized as a 32Mbit x4 I/Os 4banks device.
This synchronous device achieves high speed double-data-rate transfer rates
of up to 1066Mb/sec/pin (DDR21066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features
such as posted CAS with additive latency, write latency = read latency -1,
Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

Speed : DDR2-800 6-6-6

• JEDEC standard VDD  = 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 4 Banks
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an
  optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support 50ohm ODT
  - High Temperature Self-Refresh rate enable
• All of products are Lead-Free, Halogen-Free, and RoHS complian

 

 



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KFG1216U2B-SIB6000

HOT ITEM, LOW PRICE!


70% Off!
Qty
527,671
Price
US$ 0.5
 
Datecode 10+
Part No 32MX16 ONE-NAND
Package FBGA
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 1600
Brand SAMSUNG
Item FLASH-ONE-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed

 

General Overview  

OneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device
includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot
code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16
Host Interface and a random access time speed of ~76ns.

The device operates up to a maximum host-driven clock frequency of 66MHz for synchronous reads at Vcc(or Vccq.
Refer to chapter 4.2) with minimum 6-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. 
Appropriate wait cycles are determined by programmable read latency.

OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector
counter register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block
OTP(Block 0) that can be used to increase system security or to provide identification capabilities.

Product Features

          •   Supply Voltage:                          3.3V(2.7V to 3.6V)
          •   Host Interface:                           16 bit
          •   5KB Internal BufferRAM:             1KB BootRAM, 4KB DataRAM

Synchronous Burst Read
            - Up to  66MHz clock frequency
            - Linear Burst 4-, 8-, 16-, 32-words with wrap around
            - Continuous 1K words Sequential Burst
Asynchronous Random Read
            - 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
              1~40MHz : Latency 3 available
              1~66MHz : Latency 4,5,6 and 7 available
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Reset
up to 64 Blocks
Typical  Power,
   - Standby current : 35uA
   - Synchronous Burst Read current(66MHz) : 25mA
   - Load current : 30mA
   - Program current : 28mA
   - Erase current : 23mA
   - Multi Block Erase current : 23mA
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years

Package : 67FBGA(LF)

 

 

 



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K4X28163PN-TGC3T00

8M x16 Mobile-DDR SDRAM


Qty
387,880
 
Datecode 11+
Part No 8MX16 MDDR1
Package FBGA-90
Outpack TAPE ON REEL
Voltage 1.8 V
Std. Pack Qty 2000
Brand SAMSUNG
Item DDR1 SDRAM-MOBILE
RoHS RoHS
Temperature -25°C ~ 70°C
Speed C3: 133MHZ, CL 3

8M x16 Mobile-DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM/UDM for write masking only.
• Auto refresh duty cycle
- 15.6us for -25°C to 85°C



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KFG1216U2B-SIB6000

SAMSUNG NAND FLASH EXCESS


Qty
527,171
Price
US$ 0.0
 
Datecode 10+
Part No 32MX16 ONE-NAND
Package FBGA
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 1600
Brand SAMSUNG
Item FLASH-ONE-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed

 

General Overview  

OneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device
includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot
code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16
Host Interface and a random access time speed of ~76ns.

The device operates up to a maximum host-driven clock frequency of 66MHz for synchronous reads at Vcc(or Vccq.
Refer to chapter 4.2) with minimum 6-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. 
Appropriate wait cycles are determined by programmable read latency.

OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector
counter register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block
OTP(Block 0) that can be used to increase system security or to provide identification capabilities.

Product Features

          •   Supply Voltage:                          3.3V(2.7V to 3.6V)
          •   Host Interface:                           16 bit
          •   5KB Internal BufferRAM:             1KB BootRAM, 4KB DataRAM

Synchronous Burst Read
            - Up to  66MHz clock frequency
            - Linear Burst 4-, 8-, 16-, 32-words with wrap around
            - Continuous 1K words Sequential Burst
Asynchronous Random Read
            - 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
              1~40MHz : Latency 3 available
              1~66MHz : Latency 4,5,6 and 7 available
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Reset
up to 64 Blocks
Typical  Power,
   - Standby current : 35uA
   - Synchronous Burst Read current(66MHz) : 25mA
   - Load current : 30mA
   - Program current : 28mA
   - Erase current : 23mA
   - Multi Block Erase current : 23mA
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years

Package : 67FBGA(LF)

 

 

 



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K4F151612D-TC60T00

SELL - DRAM / 1MX16 FP / TSOP / Leaded / 3.3 V / TAPE ON REEL / EOL


66% Off!
Qty
162,175
 
Datecode 04+
Part No 1MX16 FP
Package TSOP
Outpack TAPE ON REEL
Voltage 3.3 V
Std. Pack Qty 1000
Brand SAMSUNG
Item DRAM
RoHS Leaded
Temperature
Speed

K4F151612D-TC60T00 :

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION :

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers
high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V),
refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power)
and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS
refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in
L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process
to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit
for microcomputer, personal computer and portable machines.

 

   K4F151612D-J(T) (3.3V, 1K Ref.)

•  Fast Page Mode operation
•  2 CAS  Byte/Word Read/Write operation
•  CAS-before-RAS refresh capability
•  RAS-only and Hidden refresh capability
•  Self-refresh capability (L-ver only)
•  TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
•  Early Write or output enable controlled write
•  JEDEC Standard pinout
•  Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages
•  Single +5V–10% power supply (5V product)
•  Single +3.3V–0.3V power supply (3.3V product

 



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K9K8G08U0E-SIB0T00

K9K8G08U0E-SIB0T00


Qty
30,000
 
Datecode 15+
Part No 1Gx8 NAND SLC
Package TSOP
Outpack TAPE ON REEL
Voltage
Std. Pack Qty 1000
Brand SAMSUNG
Item FLASH-NAND
RoHS RoHS
Temperature -40°~+85°C(IND)
Speed
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EDS5104ABTA-75

EDS5104AB is a 512M bits SDRAM FOR SELL


Qty
82,000
Price
US$ 0.0
 
Datecode 06+
Part No 128MX4 SD
Package TSOP2
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 540
Brand ELPIDA/MICRON/尔必达
Item SDRAM
RoHS Leaded
Temperature COMMERCIAL
Speed PC-133

Description :

The EDS5104AB is a 512M bits SDRAM organized as
33,554,432 words × 4 bits × 4 banks. All inputs and outputs
are referred to the rising edge of the clock input. 
It is packaged in standard 54pin plastic TSOP (II).

Features :

• 3.3V power supply
• Clock frequency:  166MHz/133MHz (max.)
• LVTTL interface
• Single pulsed /RAS
• 4 banks can operate simultaneously and independently
• Refresh cycles:  8192 refresh cycles/64ms
• 2 variations of refresh
  - Auto refresh
  - Self refresh
 



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K4M51323PI-HG75000

SAMSUNG MOBILE SDRAM OFFER


Qty
330,000
 
Datecode 12+
Part No 16MX32 MSDRAM
Package FBGA-90
Outpack TRAY
Voltage 1.8 V
Std. Pack Qty 1120
Brand SAMSUNG
Item SDRAM-MOBILE
RoHS RoHS
Temperature -25°C~+85°C(WIR
Speed 133MHZ(CL=3),83MHZ(CL=2)

The K4M51323PI is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 32 bits, fabricated with SAMSUNG’s
high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible
on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful
for a variety of high bandwidth and high performance memory system applications.

 

1.0 FEATURES
• VDD/VDDQ = 1.8V/1.8V
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Extended Temperature Operation (-25°C ~ 85°C).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 90Balls FBGA( -SXXX -Pb, -DXXX -Pb Free).

 



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K9K8G08U0E-SIB0000

SAMSUNG 8G NAND FLASH OFFER


Qty
24,000
Price
US$ 3.1
 
Datecode 15+
Part No 1Gx8 NAND SLC
Package TSOP
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 960
Brand SAMSUNG
Item FLASH-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed
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