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K4S281632O-LI75T00

These Popular Products - 8MX16 SAMSUNG SDRAM


Qty
72,000
 
Datecode 11+
Part No 8MX16 SD
Package TSOP2
Outpack TAPE ON REEL
Voltage 3.3 V
Std. Pack Qty 2000
Brand SAMSUNG
Item SDRAM
RoHS RoHS
Temperature INDUSTRIAL
Speed


Information :

Samsung DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II

The K4S281632O is 134,217,728 bits synchronous high data rate Dynamic RAM 
organized as  4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high
performance CMOS technology. 

Range of operating frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of high bandwidth, high 
performance memory system applications.

•  JEDEC standard 3.3V power supply
•  RoHS compliant  and Halogen-Free package
•  133MHz (CL=3), -40 to 85 °C 

 

 



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S29GL128P90FFIR10

30% off


30% Off!
Qty
5,040
Price
US$ 1.5
 
Datecode 16+
Part No 29LV128
Package BGA
Outpack TAPE ON REEL
Voltage 3.0v
Std. Pack Qty 1800
Brand CYPRESS
Item FLASH
RoHS RoHS
Temperature -40°~+85°C(IND)
Speed
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EDS5104ABTA-75

128MX4 SDRAM MICRON/ELPIDA


Qty
28,000
 
Datecode 06+
Part No 128MX4 SD
Package TSOP2
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 540
Brand ELPIDA/MICRON/尔必达
Item SDRAM
RoHS Leaded
Temperature COMMERCIAL
Speed PC-133

Description :

The EDS5104AB is a 512M bits SDRAM organized as
33,554,432 words × 4 bits × 4 banks. All inputs and outputs
are referred to the rising edge of the clock input. 
It is packaged in standard 54pin plastic TSOP (II).

Features :

• 3.3V power supply
• Clock frequency:  166MHz/133MHz (max.)
• LVTTL interface
• Single pulsed /RAS
• 4 banks can operate simultaneously and independently
• Refresh cycles:  8192 refresh cycles/64ms
• 2 variations of refresh
  - Auto refresh
  - Self refresh
 



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K9K8G08U0A-PIB0

HOT ITEM FOR BID!


Qty
1,000
Price
US$ 10.0
 
Datecode 0725
Part No 1Gx8 NAND SLC
Package TSOP
Outpack TRAY
Voltage 2.7V-3.6V
Std. Pack Qty
Brand SAMSUNG
Item FLASH-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed
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K9K8G08U0A-PIB0

EOL SAMSUNG NAND K9K8G08U0A-PIB0 1000 pcs


Qty
1,000
Price
US$ 10.0
 
Datecode 0725
Part No 1Gx8 NAND SLC
Package TSOP
Outpack TRAY
Voltage 2.7V-3.6V
Std. Pack Qty
Brand SAMSUNG
Item FLASH-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed
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SFUI1024J2BF2SA-I-M0-HZ-NC1

1GB USB Flash Module (UFM) make by K9F4G08U0B-PIB0


Qty
1,899
 
Datecode 11+
Part No 1GB UFM
Package
Outpack
Voltage 3.3/5V
Std. Pack Qty
Brand MAJOR
Item USB FLASH MODULE (UFM)
RoHS RoHS
Temperature -40°~+85°C(IND)
Speed

USB Flash Module (UFM) provide a wide density range of USB 2.0 high speed storage solutions in a small form factor. The UFM is an ideal solution for applications that require high quality and high reliability. Typical applications include data logging or boot drives for embedded application and netcom systems. The 10-pin USB connector on a PCB support different pitch size 2.00 mm and 2.54 mm.

The drive operates at 5V ±5% or 3.3V ±5% (optional). The UFM is also backward compatible with Revision 1.1 and can be used with operating systems that support USB Mass Storage Class Specification and bulk transfers.



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K9F4G08U0B-PIB0

on boards SAMSUNG EOL 4GB SLC NAND FLASH


Qty
3,798
Price
US$ 10.0
 
Datecode 11+
Part No 512MX8 NAND SLC
Package TSOP
Outpack TRAY
Voltage 2.7V-3.6V
Std. Pack Qty
Brand SAMSUNG
Item FLASH-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed
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EDE1116ACSE-6ELI-E

ELPIDA/MICRON/尔必达 64MX16 DDR2 FOR SELL


50% Off!
Qty
23,510
Price
US$ 0.9
 
Datecode 10+
Part No 64MX16 DDR2
Package FBGA
Outpack TRAY
Voltage 1.8 V
Std. Pack Qty 855
Brand ELPIDA/MICRON/尔必达
Item DDR2 SDRAM
RoHS RoHS
Temperature -40°~+85°C(IND)
Speed SPEED 6E: DDR2-667 (5-5-5)
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EDS1232FASE-75TT-E

4MX32 SD ELPIDA/MICRON/尔必达 SDRAM FOR SELL


Qty
92,743
Price
US$ 0.75
 
Datecode 06+
Part No 4MX32 SD
Package FBGA
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 1045
Brand ELPIDA/MICRON/尔必达
Item SDRAM
RoHS RoHS
Temperature -25°C~+85°C(WIR
Speed PC-133

 

Specifications :

 
128M bits SDRAM
EDS1232FASE (4M words × 32 bits)
• Density:  128M bits
• Organization : 1M words × 32 bits × 4 banks

Features :

• ×32 organization
• Single pulsed /RAS
• Burst read/write operation and burst read/single write operation capability

 

SONY - Produktname:  
IC EDS1232FASE-75TT-E    (Sony sparepart :  Artikel-Code : 670544601)

 



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