Special Offers


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M27C160100F1(ROHS)

EOL EPROM, You need it? We‘ve got it!


Qty
25,000
 
Datecode 10+
Part No 27C160
Package CDIP
Outpack TUBE
Voltage 5 V
Std. Pack Qty 180
Brand STM/意法半导体
Item EPROM
RoHS RoHS
Temperature 0° ~ 70°C
Speed 100NS
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EDS5104ABTA-75

SPECIAL OFFER FOR SINGLES DAY(11/11)


Qty
88,000
Price
US$ 0.0
 
Datecode 06+
Part No 128MX4 SD
Package TSOP2
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 540
Brand ELPIDA/MICRON/尔必达
Item SDRAM
RoHS Leaded
Temperature COMMERCIAL
Speed PC-133

Description :

The EDS5104AB is a 512M bits SDRAM organized as
33,554,432 words × 4 bits × 4 banks. All inputs and outputs
are referred to the rising edge of the clock input. 
It is packaged in standard 54pin plastic TSOP (II).

Features :

• 3.3V power supply
• Clock frequency:  166MHz/133MHz (max.)
• LVTTL interface
• Single pulsed /RAS
• 4 banks can operate simultaneously and independently
• Refresh cycles:  8192 refresh cycles/64ms
• 2 variations of refresh
  - Auto refresh
  - Self refresh
 



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LOT PRICE! (167)

MICRON BULK MEMORY FOR BID!


Qty
295,665
 
Datecode
Part No LOT
Package
Outpack
Voltage
Std. Pack Qty
Brand MICRON/美光
Item MEMORY
RoHS RoHS
Temperature
Speed
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K9F1208U0C-JIB0T00

SAMSUNG NAND FLASH OFFER


Qty
150,000
Price
US$ 1.75
 
Datecode 11+
Part No 64MX8 NAND SLC
Package FBGA
Outpack TAPE ON REEL
Voltage 2.7v-3.6v
Std. Pack Qty 2000
Brand SAMSUNG
Item FLASH-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed

DESCRIPTION :

Offered in 64Mx8bits, the K9F1208U0C is 512Mbit with spare 16Mbit capacity. The device is offered in 3.3V Vcc. 
Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation 
can be performed in typical 200µs on the 528-bytes and an erase operation can be performed in typical 2ms on 
a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. 

The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write control automates all program and erase functions including pulse repetition, where required, 
and internal verification and margining of data.

Even the write-intensive systems can take advantage of the K9F1208X0C′s extended reliability of 100K
program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

 

• Package :
    K9F1208U0C-JIB0: Pb-Free Package
    63-Ball FBGA (8.5 x 13 x 1.2mmt)

• Voltage Suppl :
    3.3V Device (K9F1208U0C) : 2.7V ~ 3.6V

• Organization :
    Memory Cell Array : (64M + 2M)  x 8bits
    Data Register : (512 + 16)  x  8bits

 

About 100 k of this parts are after 3 years ( D/C 2011 ) new packed and sealed. 
This parts are in new "static shield moisture bags" and without Box.  



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KFG1216U2B-SIB6000

500K PCS SAMSUNG NAND FLASH STOCK FOR SELL


Qty
527,171
Price
US$ 0.0
 
Datecode 10+
Part No 32MX16 NAND
Package FBGA
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 1600
Brand SAMSUNG
Item FLASH-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed 66MHZ

 

General Overview  

OneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device
includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot
code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16
Host Interface and a random access time speed of ~76ns.

The device operates up to a maximum host-driven clock frequency of 66MHz for synchronous reads at Vcc(or Vccq.
Refer to chapter 4.2) with minimum 6-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. 
Appropriate wait cycles are determined by programmable read latency.

OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector
counter register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block
OTP(Block 0) that can be used to increase system security or to provide identification capabilities.

Product Features

          •   Supply Voltage:                          3.3V(2.7V to 3.6V)
          •   Host Interface:                           16 bit
          •   5KB Internal BufferRAM:             1KB BootRAM, 4KB DataRAM

Synchronous Burst Read
            - Up to  66MHz clock frequency
            - Linear Burst 4-, 8-, 16-, 32-words with wrap around
            - Continuous 1K words Sequential Burst
Asynchronous Random Read
            - 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
              1~40MHz : Latency 3 available
              1~66MHz : Latency 4,5,6 and 7 available
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Reset
up to 64 Blocks
Typical  Power,
   - Standby current : 35uA
   - Synchronous Burst Read current(66MHz) : 25mA
   - Load current : 30mA
   - Program current : 28mA
   - Erase current : 23mA
   - Multi Block Erase current : 23mA
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years

Package : 67FBGA(LF)

 

 

 



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K4M51323PI-HG75000

HOT DRAM FOR SELL


Qty
330,000
 
Datecode 12+
Part No 16MX32 MSDRAM
Package FBGA-90
Outpack TRAY
Voltage 1.8 V
Std. Pack Qty 1120
Brand SAMSUNG
Item SDRAM-MOBILE
RoHS RoHS
Temperature -25°C~+85°C(WIR
Speed 133MHZ(CL=3),83MHZ(CL=2)

The K4M51323PI is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 32 bits, fabricated with SAMSUNG’s
high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible
on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful
for a variety of high bandwidth and high performance memory system applications.

 

1.0 FEATURES
• VDD/VDDQ = 1.8V/1.8V
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Extended Temperature Operation (-25°C ~ 85°C).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 90Balls FBGA( -SXXX -Pb, -DXXX -Pb Free).

 



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M27C160100F1(ROHS)

SELL EOL parts - 16 Mbit (2 Mb x 8 or 1 Mb x 16) UV EPROM


Qty
25,000
 
Datecode 10+
Part No 27C160
Package CDIP
Outpack TUBE
Voltage 5 V
Std. Pack Qty 180
Brand STM/意法半导体
Item EPROM
RoHS RoHS
Temperature 0° ~ 70°C
Speed 100NS
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MT28F400B5WG-8B

EOL - THE LAST LOT OF MT28F400B5WG-8B


Qty
31,000
 
Datecode 00+
Part No 28f400
Package TSOP
Outpack TAPE ON REEL
Voltage 5 V
Std. Pack Qty 1000
Brand MICRON/美光
Item FLASH
RoHS Leaded
Temperature 0° ~ 70°C
Speed
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K4X28163PN-TGC3T00

8M x16 Mobile-DDR SDRAM


Qty
387,880
 
Datecode 11+
Part No 8MX16 MDDR1
Package FBGA-90
Outpack TAPE ON REEL
Voltage 1.8 V
Std. Pack Qty 2000
Brand SAMSUNG
Item DDR1 SDRAM-MOBILE
RoHS RoHS
Temperature -25°C ~ 70°C
Speed C3: 133MHZ, CL 3

8M x16 Mobile-DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM/UDM for write masking only.
• Auto refresh duty cycle
- 15.6us for -25°C to 85°C



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