Special Offers


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EDE1116ACSE-6ELI-E

ELPIDA/MICRON/尔必达 64MX16 DDR2 FOR SELL


50% Off!
Qty
23,510
Price
US$ 0.9
 
Datecode 10+
Part No 64MX16 DDR2
Package FBGA
Outpack TRAY
Voltage 1.8 V
Std. Pack Qty 855
Brand ELPIDA/MICRON/尔必达
Item DDR2 SDRAM
RoHS RoHS
Temperature -40°~+85°C(IND)
Speed SPEED 6E: DDR2-667 (5-5-5)
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EDS1232FASE-75TT-E

4MX32 SD ELPIDA/MICRON/尔必达 SDRAM FOR SELL


Qty
92,743
Price
US$ 0.75
 
Datecode 06+
Part No 4MX32 SD
Package FBGA
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 1045
Brand ELPIDA/MICRON/尔必达
Item SDRAM
RoHS RoHS
Temperature -25°C~+85°C(WIR
Speed PC-133

 

Specifications :

 
128M bits SDRAM
EDS1232FASE (4M words × 32 bits)
• Density:  128M bits
• Organization : 1M words × 32 bits × 4 banks

Features :

• ×32 organization
• Single pulsed /RAS
• Burst read/write operation and burst read/single write operation capability

 

SONY - Produktname:  
IC EDS1232FASE-75TT-E    (Sony sparepart :  Artikel-Code : 670544601)

 



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M29W160EB-70N6F

Parallel NOR Flash FOR SELL


50% Off!
Qty
30,000
Price
US$ 0.5
 
Datecode 10+
Part No 29LV160 BOTTOM
Package TSOP
Outpack TAPE ON REEL
Voltage 3.3 V
Std. Pack Qty 1500
Brand MICRON/美光
Item FLASH
RoHS RoHS
Temperature INDUSTRIAL
Speed 70 NS
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K4M641633K-BN75000

FOR SELL : Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA


Qty
100,000
 
Datecode 09+
Part No 4MX16 MSDRAM
Package FBGA-54
Outpack TRAY
Voltage 3.0V/3.3V
Std. Pack Qty 1280
Brand SAMSUNG
Item SDRAM-MOBILE
RoHS RoHS
Temperature -25°C~+85°C(WIR
Speed 133MHZ

The K4M641633K is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high performance
memory system applications.



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K4T51163QJ-BCE7000

SAMSUNG 32MX16 DDR2 FOR SELL /


Qty
30,732
Price
US$ 1.0
 
Datecode 14+
Part No 32MX16 DDR2
Package FBGA
Outpack TRAY
Voltage 1.8 V
Std. Pack Qty 1280
Brand SAMSUNG
Item DDR2 SDRAM
RoHS RoHS
Temperature COMMERCIAL
Speed

K4T51163QJ-BCE7000 : 512Mb J-die DDR2 SDRAM

84 FBGA with Lead-Free & Halogen-Free (RoHS compliant)

The 512Mb DDR2 SDRAM is organized as a 32Mbit x4 I/Os 4banks device.
This synchronous device achieves high speed double-data-rate transfer rates
of up to 1066Mb/sec/pin (DDR21066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features
such as posted CAS with additive latency, write latency = read latency -1,
Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

Speed : DDR2-800 5-5-5

• JEDEC standard VDD  = 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 4 Banks
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an
  optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support 50ohm ODT
  - High Temperature Self-Refresh rate enable
• All of products are Lead-Free, Halogen-Free, and RoHS complian

 



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K4T51163QJ-BCF7000

32MX16 DDR2 FOR SELL


Qty
18,062
Price
US$ 0.88
 
Datecode 13+
Part No 32MX16 DDR2
Package FBGA
Outpack TRAY
Voltage 1.8 V
Std. Pack Qty 1280
Brand SAMSUNG
Item DDR2 SDRAM
RoHS RoHS
Temperature COMMERCIAL
Speed

K4T51163QJ-BCF7000 : 512Mb J-die DDR2 SDRAM

84FBGA with Lead-Free & Halogen-Free (RoHS compliant)

The 512Mb DDR2 SDRAM is organized as a 32Mbit x4 I/Os 4banks device.
This synchronous device achieves high speed double-data-rate transfer rates
of up to 1066Mb/sec/pin (DDR21066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features
such as posted CAS with additive latency, write latency = read latency -1,
Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

Speed : DDR2-800 6-6-6

• JEDEC standard VDD  = 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 4 Banks
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an
  optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support 50ohm ODT
  - High Temperature Self-Refresh rate enable
• All of products are Lead-Free, Halogen-Free, and RoHS complian

 

 



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KFG1216U2B-SIB6000

HOT ITEM, LOW PRICE!


70% Off!
Qty
527,671
Price
US$ 0.5
 
Datecode 10+
Part No 32MX16 ONE-NAND
Package FBGA
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 1600
Brand SAMSUNG
Item FLASH-ONE-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed

 

General Overview  

OneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device
includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot
code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16
Host Interface and a random access time speed of ~76ns.

The device operates up to a maximum host-driven clock frequency of 66MHz for synchronous reads at Vcc(or Vccq.
Refer to chapter 4.2) with minimum 6-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. 
Appropriate wait cycles are determined by programmable read latency.

OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector
counter register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block
OTP(Block 0) that can be used to increase system security or to provide identification capabilities.

Product Features

          •   Supply Voltage:                          3.3V(2.7V to 3.6V)
          •   Host Interface:                           16 bit
          •   5KB Internal BufferRAM:             1KB BootRAM, 4KB DataRAM

Synchronous Burst Read
            - Up to  66MHz clock frequency
            - Linear Burst 4-, 8-, 16-, 32-words with wrap around
            - Continuous 1K words Sequential Burst
Asynchronous Random Read
            - 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
              1~40MHz : Latency 3 available
              1~66MHz : Latency 4,5,6 and 7 available
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Reset
up to 64 Blocks
Typical  Power,
   - Standby current : 35uA
   - Synchronous Burst Read current(66MHz) : 25mA
   - Load current : 30mA
   - Program current : 28mA
   - Erase current : 23mA
   - Multi Block Erase current : 23mA
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years

Package : 67FBGA(LF)

 

 

 



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K4X28163PN-TGC3T00

8M x16 Mobile-DDR SDRAM


Qty
387,880
 
Datecode 11+
Part No 8MX16 MDDR1
Package FBGA-90
Outpack TAPE ON REEL
Voltage 1.8 V
Std. Pack Qty 2000
Brand SAMSUNG
Item DDR1 SDRAM-MOBILE
RoHS RoHS
Temperature -25°C ~ 70°C
Speed C3: 133MHZ, CL 3

8M x16 Mobile-DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM/UDM for write masking only.
• Auto refresh duty cycle
- 15.6us for -25°C to 85°C



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KFG1216U2B-SIB6000

SAMSUNG NAND FLASH EXCESS


Qty
527,171
Price
US$ 0.0
 
Datecode 10+
Part No 32MX16 ONE-NAND
Package FBGA
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 1600
Brand SAMSUNG
Item FLASH-ONE-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed

 

General Overview  

OneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device
includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot
code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16
Host Interface and a random access time speed of ~76ns.

The device operates up to a maximum host-driven clock frequency of 66MHz for synchronous reads at Vcc(or Vccq.
Refer to chapter 4.2) with minimum 6-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. 
Appropriate wait cycles are determined by programmable read latency.

OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector
counter register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block
OTP(Block 0) that can be used to increase system security or to provide identification capabilities.

Product Features

          •   Supply Voltage:                          3.3V(2.7V to 3.6V)
          •   Host Interface:                           16 bit
          •   5KB Internal BufferRAM:             1KB BootRAM, 4KB DataRAM

Synchronous Burst Read
            - Up to  66MHz clock frequency
            - Linear Burst 4-, 8-, 16-, 32-words with wrap around
            - Continuous 1K words Sequential Burst
Asynchronous Random Read
            - 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
              1~40MHz : Latency 3 available
              1~66MHz : Latency 4,5,6 and 7 available
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Reset
up to 64 Blocks
Typical  Power,
   - Standby current : 35uA
   - Synchronous Burst Read current(66MHz) : 25mA
   - Load current : 30mA
   - Program current : 28mA
   - Erase current : 23mA
   - Multi Block Erase current : 23mA
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years

Package : 67FBGA(LF)

 

 

 



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