Special Offers



 

MT28F400B5WG-8B

EOL - THE LAST LOT OF MT28F400B5WG-8B


Qty
31,000
 
Datecode 00+
Part No 28f400
Package TSOP
Outpack TAPE ON REEL
Voltage 5 V
Std. Pack Qty 1000
Brand MICRON/美光
Item FLASH
RoHS Leaded
Temperature 0° ~ 70°C
Speed
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K4X28163PN-TGC3T00

8M x16 Mobile-DDR SDRAM


Qty
387,880
 
Datecode 11+
Part No 8MX16 MDDR1
Package FBGA-90
Outpack TAPE ON REEL
Voltage 1.8 V
Std. Pack Qty 2000
Brand SAMSUNG
Item DDR1 SDRAM-MOBILE
RoHS RoHS
Temperature -25°C ~ 70°C
Speed C3: 133MHZ, CL 3

8M x16 Mobile-DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM/UDM for write masking only.
• Auto refresh duty cycle
- 15.6us for -25°C to 85°C



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ATMEGA88PA-MMHR

HOT EXCESS ITEM FOR BID!


Qty
20,000
Price
US$ 0.0
 
Datecode 11+
Part No ATMEGA88
Package VQFN
Outpack TAPE ON REEL
Voltage 1.8 TO 5.5
Std. Pack Qty 6000
Brand ATMEL
Item MCU
RoHS RoHS
Temperature -40°~+85°C(IND)
Speed 20MHZ
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MX29GL640EBTI-70G

HOT MACRONIX FLASH STOCK OFFER!


Qty
15,000
 
Datecode 17+
Part No 29GL640
Package TSOP
Outpack TRAY
Voltage 2.7V-3.6V
Std. Pack Qty 96
Brand MACRONIX/MXIC/旺宏
Item FLASH
RoHS RoHS
Temperature -40°~+85°C(IND)
Speed

GENERAL FEATURES

Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

- V I/O voltage must tight with VCC

- VI/O=VCC=2.7V~3.6V

Byte/W

ord mode switchable

- 8,388,608 x 8 / 4,194,304 x 16

Sector architecture

- MX29GL640E

T/B: 127 x 32Kword(64KB) + 8 x 4Kword(8KB) boot sector

- MX29GL640E H/L: 128 x 32Kword(64KB) Uniform sector

16-byte/8-word page read buf

fer

32-byte/16-word write buf

fer

Extra 128-word sector for security

- Features factory locked and identifiable, and customer lockable

Advanced sector protection function (Solid and Password Protect)

Latch-up protected to 100mA

from -1V to 1.5xVcc

Low Vcc write inhibit : Vcc ≤ VLKO

Compatible with JEDEC standard

- Pinout and software compatible to single power supply Flash

Deep power down mode



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FMS6416LBH-75EER

SUMMER SAVINGS


50% Off!
Qty
50,000
 
Datecode 15+
Part No 4MX16 LPSDRAM
Package FBGA-54
Outpack TAPE ON REEL
Voltage 1.8 V
Std. Pack Qty 2000
Brand FIDELIX/飞凌
Item SDRAM-LP
RoHS RoHS
Temperature -25°C~+85°C(WIR
Speed

64M(4Mx16) Low Power SDRAM



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KFG1216U2B-SIB6000

SELL - up to 70% off


70% Off!
Qty
527,671
Price
US$ 0.5
 
Datecode 10+
Part No 32MX16 ONE-NAND
Package FBGA
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 1600
Brand SAMSUNG
Item FLASH-ONE-NAND
RoHS RoHS
Temperature INDUSTRIAL
Speed

 

General Overview  

OneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device
includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot
code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16
Host Interface and a random access time speed of ~76ns.

The device operates up to a maximum host-driven clock frequency of 66MHz for synchronous reads at Vcc(or Vccq.
Refer to chapter 4.2) with minimum 6-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. 
Appropriate wait cycles are determined by programmable read latency.

OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector
counter register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block
OTP(Block 0) that can be used to increase system security or to provide identification capabilities.

Product Features

          •   Supply Voltage:                          3.3V(2.7V to 3.6V)
          •   Host Interface:                           16 bit
          •   5KB Internal BufferRAM:             1KB BootRAM, 4KB DataRAM

Synchronous Burst Read
            - Up to  66MHz clock frequency
            - Linear Burst 4-, 8-, 16-, 32-words with wrap around
            - Continuous 1K words Sequential Burst
Asynchronous Random Read
            - 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
              1~40MHz : Latency 3 available
              1~66MHz : Latency 4,5,6 and 7 available
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Reset
up to 64 Blocks
Typical  Power,
   - Standby current : 35uA
   - Synchronous Burst Read current(66MHz) : 25mA
   - Load current : 30mA
   - Program current : 28mA
   - Erase current : 23mA
   - Multi Block Erase current : 23mA
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years

Package : 67FBGA(LF)

 

 

 



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K4S281632O-LI75T00

These Popular Products - 8MX16 SAMSUNG SDRAM


Qty
72,000
 
Datecode 11+
Part No 8MX16 SD
Package TSOP2
Outpack TAPE ON REEL
Voltage 3.3 V
Std. Pack Qty 2000
Brand SAMSUNG
Item SDRAM
RoHS RoHS
Temperature INDUSTRIAL
Speed


Information :

Samsung DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II

The K4S281632O is 134,217,728 bits synchronous high data rate Dynamic RAM 
organized as  4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high
performance CMOS technology. 

Range of operating frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of high bandwidth, high 
performance memory system applications.

•  JEDEC standard 3.3V power supply
•  RoHS compliant  and Halogen-Free package
•  133MHz (CL=3), -40 to 85 °C 

 

 



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S29GL128P90FFIR10

30% off


30% Off!
Qty
5,040
Price
US$ 1.5
 
Datecode 16+
Part No 29LV128
Package BGA
Outpack TRAY
Voltage 3.0v
Std. Pack Qty 720
Brand CYPRESS
Item FLASH
RoHS RoHS
Temperature -40°~+85°C(IND)
Speed
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EDS5104ABTA-75

128MX4 SDRAM MICRON/ELPIDA


Qty
28,000
 
Datecode 06+
Part No 128MX4 SD
Package TSOP2
Outpack TRAY
Voltage 3.3 V
Std. Pack Qty 540
Brand ELPIDA/MICRON/尔必达
Item SDRAM
RoHS Leaded
Temperature COMMERCIAL
Speed PC-133

Description :

The EDS5104AB is a 512M bits SDRAM organized as
33,554,432 words × 4 bits × 4 banks. All inputs and outputs
are referred to the rising edge of the clock input. 
It is packaged in standard 54pin plastic TSOP (II).

Features :

• 3.3V power supply
• Clock frequency:  166MHz/133MHz (max.)
• LVTTL interface
• Single pulsed /RAS
• 4 banks can operate simultaneously and independently
• Refresh cycles:  8192 refresh cycles/64ms
• 2 variations of refresh
  - Auto refresh
  - Self refresh
 



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