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K4M51323PI-HG75000

SAMSUNG MOBILE SDRAM OFFER


Qty
330,000
 
Datecode 12+
Part No 16MX32 MSDRAM
Package FBGA-90
Outpack TRAY
Voltage 1.8 V
Std. Pack Qty 1120
Brand SAMSUNG
Item SDRAM-MOBILE
RoHS RoHS
Temperature -25°C~+85°C(WIR
Speed 133MHZ(CL=3),83MHZ(CL=2)

The K4M51323PI is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 32 bits, fabricated with SAMSUNG’s
high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible
on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful
for a variety of high bandwidth and high performance memory system applications.

 

1.0 FEATURES
• VDD/VDDQ = 1.8V/1.8V
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Extended Temperature Operation (-25°C ~ 85°C).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 90Balls FBGA( -SXXX -Pb, -DXXX -Pb Free).

 



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