| KLM8G1GETF-B041006 |
SAMSUNG/三星 |
FLASH-EMMC |
24,483
|
FLASH-EMMC / 8GB EMMC / FBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 1.8V/3.3V / TRAY / 1120 pcs |
| IS41C16100C-50KLI |
ISSI/矽成 |
DRAM |
712
|
DRAM / 1MX16 EDO / SOJ-42 / 50 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / EOL / 1600 pcs 4.0 kg 53*13*12 cm |
| LPC1768FBD100K |
NXP/恩智浦 |
MCU-ARM |
11,450
|
MCU-ARM / LPC1768 / LQFP-100 / 120 MHZ / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 450 pcs 1.0 kg 36*16*5 cm |
| LPC1765FBD100K |
NXP/恩智浦 |
MCU-ARM |
9,200
|
MCU-ARM / LPC1765 / LQFP-100 / 120 MHZ / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 450 pcs |
| K4B1G1646I-BCNBTCV |
SAMSUNG/三星 |
DDR3 SDRAM |
52,000
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 2133 MBPS / 0 C~+85 C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 pcs |
| K4S560832N-LC75000 |
SAMSUNG/三星 |
SDRAM |
2,522
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.0 kg 38*19*11 cm |
| MT41K256M16TW-107:P TR |
MICRON/美光 |
DDR3L SDRAM |
92,000
|
DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs |
| MX25L6433FM2I-08G-TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
18,000
|
FLASH-SPI / 64MB SPI / SOP-8 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs 0.0 kg 39*36*6 cm |
| K4A8G165WC-BIWE0CV |
SAMSUNG/三星 |
DDR4 SDRAM |
1,020
|
DDR4 SDRAM / 512MX16 DDR4 / FBGA-96 / 2666 MBPS / -40 C~+85 C / RoHS / 1.2V / TRAY / 1120 pcs 2.56 kg 38*19*11* cm |
| MT46V64M4P-6T:G |
MICRON/美光 |
DDR1 SDRAM |
14,214
|
DDR1 SDRAM / 64MX4 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / RoHS / 2.5 V / TAPE ON REEL / 1000 pcs 1.6 kg 37*35*8 cm |
| MT46V8M16TG-6T:D |
MICRON/美光 |
DDR1 SDRAM |
10,970
|
DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / Leaded / 2.5 V / TRAY / 1000 pcs 2.67 kg 37*19*12 cm |
| MT46V8M16TG-6T:D TR |
MICRON/美光 |
DDR1 SDRAM |
29,000
|
DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 166 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / EOL / 1000 pcs 1.54 kg 37*35*8 cm |
| K4A4G165WE-BIRC0CV |
SAMSUNG/三星 |
DDR4 SDRAM |
3,358
|
DDR4 SDRAM / 256MX16 DDR4 / FBGA-96 / 2400 MBPS / -40 C~+85 C / RoHS / 1.2V / TRAY / 1120 pcs |
| LM7301SN1T1G |
ON-SEMICONDUCTOR/安森美 |
OP AMPS |
3,000
|
OP AMPS / LM7301 / SOT-23-5 / 4 MHZ / -40 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / 3000 pcs |
| K4B2G0846F-BYMAT00 |
SAMSUNG/三星 |
DDR3L SDRAM |
26,000
|
DDR3L SDRAM / 256MX8 DDR3 / FBGA-78 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / EOL / 2000 pcs |
| SMAJ58AT/R |
STM/意法半导体 |
VOLTAGE SUPPRESSOR |
629,990
|
VOLTAGE SUPPRESSOR / SMAJ58 / SMD / 400 W / -65 C~+150 C / RoHS / 58V / TAPE ON REEL / 1000 pcs |
| NCL30160DR2G |
ON-SEMICONDUCTOR/安森美 |
LED DRIVER |
48,500
|
LED DRIVER / NCL30160 / SOIC-8 / 1 A / -40 C~+125 C / RoHS / 6.3V~40V / TAPE ON REEL / EOL / 2500 pcs |
| LPC2138FBD64/01,15 |
NXP/恩智浦 |
MCU |
9,240
|
MCU / LPC2138 / LQFP-64 / 60 MHZ / -40 C~+85 C / RoHS / 3.0V~3.6V / TRAY / 800 pcs 0.46 kg 33*15*2 cm |
| UAA2016PG |
ON-SEMICONDUCTOR/安森美 |
PMIC/POWER MANAGEMENT |
23,800
|
PMIC/POWER MANAGEMENT / UAA2016 / PDIP-8 / 150 MA / -20 ~+85 / RoHS / -4.5 V / TUBE |
| 3005378 STC |
STC/宏晶 |
|
10,000
|
3005378 / RoHS / 5000 pcs |
| LMV324AM14X |
ON-SEMICONDUCTOR/安森美 |
OP AMPS |
45,000
|
OP AMPS / LMV324 / SOIC-14 / 1.2 MHZ / -40 C~+125 C / RoHS / 2.7 V / TAPE ON REEL / EOL / 2500 pcs |
| TS321AIYLT |
STM/意法半导体 |
OP AMPS |
48,000
|
OP AMPS / TS321 / SOT-23-5 / 800 KHZ / -40 C~+125 C / RoHS / 3.0V~30V / TAPE ON REEL / 3000 pcs |
| TPS3809K33DBVR |
TEXAS/TI/德仪 |
SUPERVISOR |
57,000
|
SUPERVISOR / TPS3809 / SOT-23-3 / 9 UA / -40 C~+85 C / RoHS / 2.93V / TAPE ON REEL / 3000 pcs |
| STTH8L06D |
STM/意法半导体 |
RECTIFIER |
62,000
|
RECTIFIER / 8L06 / TO-220AC-2 / 8 A / -40 C~+175 C / RoHS / 600 V / TUBE / 1000 pcs |
| 74LCX08MX |
ON-SEMICONDUCTOR/安森美 |
TTL |
75,000
|
TTL / 74LCX08 / SOIC-14 / 24 MA / -40 C~+85 C / RoHS / 5.0 V / TAPE ON REEL / EOL / 2500 pcs |