H5TQ8G43BMR-RDC

产品概述

IC Picture

图片仅供参考

制造商IC编号 H5TQ8G43BMR-RDC
厂牌 SK HYNIX/海力士
IC 类别 DDR3 SDRAM
IC代码 2GX4 DDR3

产品详情

脚位/封装 FBGA-78
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.5 V
温度规格 0 C~+95 C
速度 1866 MBPS
标准包装数量 1600
标准外箱
Number Of Words 2G
Bit Organization x4
Density 8G
Operating Temperature commercial temperature(0°C~85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 3rd
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Description The H5TQ8G43AMR-xxC and H5TQ8G83AMR-xxC are a 8Gb normal power Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth and normal power operation at 1.5V. SK hynix 8Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

供应链有货

IC 编号 数量 生产年份
H5TQ8G43BMR-RDC 262 1647+ 索取报价
H5TQ8G43BMR-RDC 8,000 索取报价
H5TQ8G43BMR-RDC 9,256 17+ 索取报价
H5TQ8G43BMR-RDC 6,805 2016+ 索取报价
H5TQ8G43BMR-RDC 6,801 2016+ 索取报价
H5TQ8G43BMR-RDC 315 16+ 索取报价
H5TQ8G43BMR-RDC 323 16+ 索取报价
H5TQ8G43BMR-RDC 0 索取报价
H5TQ8G43BMR-RDC 10,000 索取报价

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
H5TQ8G43AMRRDC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ8G43DMR-RDC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C