| IS43R32400D-4B |
ISSI/矽成 |
DDR1 SDRAM |
1,150
|
DDR1 SDRAM / 4MX32 DDR1 / BGA-144 / 250 MHZ / 0 C~+85 C / Leaded / 2.5 V |
| IS42VS16800E-75BLI |
ISSI/矽成 |
SDRAM-LV |
1,414
|
SDRAM-LV / 8MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43DR32800A-37CBLI |
ISSI/矽成 |
DDR2 SDRAM |
1,417
|
DDR2 SDRAM / 8MX32 DDR2 / WBGA-126 / 533 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS42S16400D-7BLI |
ISSI/矽成 |
SDRAM |
1,482
|
SDRAM / 4MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 286 pcs |
| IS42RM32200G-75BLI |
ISSI/矽成 |
SDRAM MOBILE |
1,651
|
SDRAM MOBILE / 2MX32 SD / FBGA-90 / 133 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / 1.0 kg 37*16*9 cm |
| IS42VS32200E-75TL |
ISSI/矽成 |
SDRAM-LV |
2,172
|
SDRAM-LV / 2MX32 SD / TSOP2(86) / 133 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY |
| IS41LV44052C-50CTGI |
ISSI/矽成 |
DRAM |
2,208
|
DRAM / 4MX4 FP / TSOP2(24/26) / 50 NS / -40 C~+85 C / Leaded / 3.3 V / EOL |
| IS42VM16800E-75TLI |
ISSI/矽成 |
SDRAM MOBILE |
2,458
|
SDRAM MOBILE / 8MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43LR32400E-6BLI |
ISSI/矽成 |
LPDDR1 MOBILE |
2,470
|
LPDDR1 MOBILE / 4MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43R16160B-6BI |
ISSI/矽成 |
DDR1 SDRAM |
2,214
|
DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / Leaded / 2.5 V / EOL |
| IS42VS16400E-75BLI |
ISSI/矽成 |
SDRAM-LV |
642
|
SDRAM-LV / 4MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IS42VS16100E-75BLI |
ISSI/矽成 |
SDRAM-LV |
5,899
|
SDRAM-LV / 1MX16 SD / BGA-60 / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IS43R16160B-6BL |
ISSI/矽成 |
DDR1 SDRAM |
180
|
DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 166 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL |
| IC43R16160E-5TL |
ISSI/矽成 |
DDR1 SDRAM |
6,376
|
DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL |
| IS43R16160B-75TL |
ISSI/矽成 |
DDR1 SDRAM |
6,480
|
DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL / 108 pcs |
| IS42SM16160D-7TL |
ISSI/矽成 |
SDRAM MOBILE |
4,090
|
SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 108 pcs |
| IS42VM16400G-75BLI |
ISSI/矽成 |
SDRAM MOBILE |
17,083
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 3480 pcs |
| AM29DL163CT-90EI |
CYPRESS/赛普拉斯 |
FLASH-NOR |
5,164
|
FLASH-NOR / 29DL163 TOP / TSOP-48 / 90 NS / -40 C~+85 C / Leaded / 3.0V / TRAY / 480 pcs |
| LY62W1024LL-55LLI |
LYONTEK/來揚 |
SRAM |
212
|
SRAM / 128KX8 SRAM / TSOP-32 / 55 NS / -40 C~+85 C / RoHS / 2.7V~5.5V / TRAY / 560 pcs 1.0 kg 38*16*9 cm |
| M29F400BT-70N1 |
MICRON/美光 |
FLASH-NOR |
5,079
|
FLASH-NOR / 29F400 TOP / TSOP-48 / 70 NS / 0 C~+70 C / Leaded / 5.0 V / TRAY / 576 pcs 1.76 kg 40*20*11 cm |
| AM29LV400BB-70ED |
INFINEON/英飞凌 |
FLASH-NOR |
8,640
|
FLASH-NOR / 29LV400 BOTTOM / TSOP-48 / 70 NS / 0 C~+70 C / RoHS / 3.3 V / TRAY / 960 pcs 2.31 kg 40*19*12 cm |
| K9K8G08U0E-SCB0T00 |
SAMSUNG/三星 |
FLASH-NAND |
20,000
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1000 pcs |
| EM638165TS-7 |
ETRON/鈺創 |
SDRAM |
20
|
SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+70 C / Leaded / 3.3 V |
| ABS2M32SD-HR |
AB-SUNSHINE |
SDRAM |
5
|
SDRAM / 2MX32 SD / TSOP2(86) / 133 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / 1080 pcs 2.06 kg 36*16*9* cm |
| MT28F320J3RG-11 |
MICRON/美光 |
FLASH-NOR |
20
|
FLASH-NOR / 28F320 / TSOP-56 / 110 NS / 0 C~+85 C / Leaded / 2.7V~3.6V |