HY29LV320DT-90EC

GENERAL DESCRIPTION The HY29LV320 is a 32 Mbit, 3 volt-only CMOS Flash memory organized as 2,097,152 (2M) words. The device is available in 48-pin TSOP and 63ball FBGA packages. Word-wide data (x16) appears on DQ[15:0]. The HY29LV320 can be programmed and erased in-system with a single 3 volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a higher voltage VPP power supply to perform those functions. The device can also be programmed in standard EPROM programmers. Access times as fast as 70ns over the full operating voltage range of 2.7 - 3.6 volts are offered for timing compatibility with the zero wait state requirements of high speed microprocessors. To eliminate bus contention, the HY29LV320 has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device is compatible with the JEDEC singlepower-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings, from where they are routed to an internal state-machine that controls the erase and programming circuits. Device programming is performed a word at a time by executing the four-cycle Program Command write sequence. This initiates an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Faster programming times are achieved by placing the HY29LV320 in the Unlock Bypass mode, which requires only two write cycles to program data instead of four. The HY29LV320 features a sector architecture and is offered in two versions: n HY29LV320B - a device with boot-sector architecture with the boot sectors at the bottom of the address range, containing one 8KW, two 4KW, one 16KW and sixty-three 32KW sectors. n HY29LV320T - a device with boot-sector architecture with the boot sectors at the top of the address range, containing one 8KW, two 4KW, one 16KW and sixty-three 32KW sectors.