HY57V281620HCT-6

產品概述

IC Picture

圖片僅供參考

製造商IC編號 HY57V281620HCT-6
廠牌 SK HYNIX/海力士
IC 類別 SDRAM
IC代碼 8MX16 SD
共通IC編號 HY57V281620HCT-6 HY57V281
HY57V281620HCT-6 X
HY57V281620HCT-6/H
HY57V281620HCT-60
HY57V281620HCT-6HY
HY57V281620HCT-6HYNIX
HY57V281620HCT6 NBSP
HY57V281620HCT65293

產品詳情

脚位/封装 TSOP2
外包裝 TRAY
無鉛/環保 含鉛
電壓(伏) 3.3 V
溫度規格 0 C~+70 C
速度 166 MHZ
標準包裝數量
標準外箱
Number Of Words 8M
Bit Organization x16
Density 128M
Package Material normal
Interface LVTTL
Hynix Memory HY
No Of Banks 4 banks
Die Generation 4th Gen.
Power Consumption normal power
Shipping Method tray

DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L/S)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8, or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.

供應鏈有貨

IC 編號 數量 生產年份
HY57V281620HCT-6 8,400 10+ 索取報價
HY57V281620HCT-6 2,219 2006+ 索取報價
HY57V281620HCT-6 8,000 2009+ 索取報價
HY57V281620HCT-6 0 索取報價
HY57V281620HCT-6 6,380 201025 索取報價
HY57V281620HCT-6 1,920 10+ 索取報價
HY57V281620HCT-6 3,200 10+ 索取報價
HY57V281620HCT-6 2,544 10+ 索取報價
HY57V281620HCT-6 4,500 10+ 索取報價
HY57V281620HCT-6 8,000 索取報價

FFFE/互通料號 (形式,腳位和功能對等)

IC 編號 脚位/封装 電壓(伏) 速度 溫度規格
AS4C8M16S-6TCN TSOP2 3.3 V 166 MHZ 0 C~+70 C
AS4C8M16S-6TCNTR TSOP2 3.3 V 166 MHZ 0 C~+70 C
AS4C8M16SA-6TCN TSOP2 3.3 V 166 MHZ 0 C~+70 C
AS4C8M16SA-6TCNTR TSOP2 3.3 V 166 MHZ 0 C~+70 C
EM639165TS-6 TSOP2 3.3 V 166 MHZ 0 C~+70 C
HY57V28160AT-6 TSOP2 3.3 V 166 MHZ 0 C~+70 C
HY57V28160HCT-6 TSOP2 3.3 V 166 MHZ 0 C~+70 C
HY57V281620ALT-6 TSOP2 3.3 V 166 MHZ 0 C~+70 C
HY57V281620AT-6 TSOP2 3.3 V 166 MHZ 0 C~+70 C
HY57V281620AT-6 TSOP2 3.3 V 166 MHZ 0 C~+70 C