圖片僅供參考
製造商IC編號 | K4B4G1646E-BCMA SAMSUNG |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR3 SDRAM |
IC代碼 | 256MX16 DDR3 |
脚位/封装 | FBGA-96 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.5 V |
溫度規格 | 0 C~+85 C |
速度 | 1866 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4B4G1646E-BCMA SAMSUNG | 100,000+ | 20+ | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EM6GE16EWAKG-10H | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63AFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63CFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63CFR-RDC T R | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63CFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63EFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63EFR-RDA/PBA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63EFR-RDC D3 256X | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63M/AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |