圖片僅供參考
製造商IC編號 | K4T1G084QE-HCE6 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 128MX8 DDR2 |
共通IC編號 | K4T1G084QE-HCE60 |
K4T1G084QE-HCE600 | |
K4T1G084QE-HCE6000 | |
K4T1G084QE-HCE60000 | |
K4T1G084QE-HCE6T | |
K4T1G084QE-HCE6T00 |
脚位/封装 | FBGA-60 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | 0 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4T1G084QE-HCE6 | 116 | 1104+ | 索取報價 |
K4T1G084QE-HCE6 | 3,840 | 10+ | 索取報價 |
K4T1G084QE-HCE6 | 272 | 10+ | 索取報價 |
K4T1G084QE-HCE6 | 3,840 | 10 | 索取報價 |
K4T1G084QE-HCE6 | 5,660 | 索取報價 | |
K4T1G084QE-HCE6 | 12,500 | 索取報價 | |
K4T1G084QE-HCE6 | 100 | 索取報價 | |
K4T1G084QE-HCE6 | 4,789 | 2012+ | 索取報價 |
K4T1G084QE-HCE6 | 5,000 | 9 | 索取報價 |
K4T1G084QE-HCE6 | 2,440 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
MT47H128M8JL-3 ES:G | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8JL-37E ES:G | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8JL-37E:G | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8JL-3:G | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8JN-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8JN-3:H | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8JN-3H | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8QGM-3:J | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8QJM-3:J | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8QTM-3:J | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |