K6R4016V1D-UI1

GENERAL DESCRIPTION  Fast Access Time 8,10ns(Max.) The K6R4016V1D is a 4,194,304-bit high-speed Static Random  Low Power Dissipation Access Memory organized as 262,144 words by 16 bits. The Standby (TTL) : 20mA(Max.) K6R4016V1D uses 16 common input and output lines and has (CMOS) : 5mA(Max.) an output enable pin which operates faster than address 1.2mA(Max.)L-Ver. only. access time at read cycle. Also it allows that lower and upper Operating K6R4016V1D-08 : 80mA(Max.) byte access by data byte control(UBLB). The device is fabri- K6R4016V1D-10 : 65mA(Max.) cated using SAMSUNG ′s advanced CMOS process and  Single 3.3 ±0.3V Power Supply designed for high-speed circuit technology. It is particularly well  TTL Compatible Inputs and Outputs suited for use in high-density high-speed system applications.  Fully Static Operation The K6R4016V1D is packaged in a 400mil 44-pin plastic SOJ - No Clock or Refresh required or TSOP(II) forward or 48 TBGA.  Three State Outputs  2V Minimum Data Retention: L-Ver. only.  Center Power/Ground Pin Configuration  Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16  Standard Pin Configuration K6R4016V1D-J : 44-SOJ-400 K6R4016V1D-K : 44-SOJ-400(Lead-Free) K6R4016V1D-T : 44-TSOP2-400BF K6R4016V1D-U : 44-TSOP2-400BF (Lead-Free) K6R4016V1D-E : 48-TBGA with 0.75 Ball pitch (7mm X 9mm)  Operating in Commercial and Industrial Temperature range.