圖片僅供參考
製造商IC編號 | K9F4G08U0B-SI |
廠牌 | SAMSUNG/三星 |
IC 類別 | FLASH-NAND |
IC代碼 | 512MX8 NAND SLC |
脚位/封装 | TSOP-48 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 2.7V-3.6V |
溫度規格 | -40 C~+85 C |
速度 | 25 NS |
標準包裝數量 | 960 |
標準外箱 |
GENERAL DESCRIPTION Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A progr am operation can be per- formed in typical 200 µs on the (2K+64)Byte page and an erase oper ation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the dat a register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repe- tition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping- out algorithm. The K9F4G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EN27LN4G08-25TIP | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
H27U4G8F2BTR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
H27U4G8F2DTR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
H27U4G8F2DTR-BIR | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
H27U4G8F2ETR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
IS34ML04G081-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML04G081-TLI-TR | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML04G084-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML04G084-TLI-TR | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML04G088-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |