| 脚位/封装 |
TSOP-48
|
| 外包裝 |
|
| 無鉛/環保 |
含鉛
|
| 電壓(伏) |
2.7V-3.6V
|
| 溫度規格 |
-40 C~+85 C
|
| 速度 |
70 NS
|
| 標準包裝數量 |
|
| 標準外箱 |
|
| Density |
64M
|
| Silicon Version |
F
|
| Functionality Security |
Top boot (top blocks protected)
|
| Package |
TSOP(NA = 48-pin ,12 x 20mm and NB = 56-pin,14 x 20mm)
|
General Description
The M29W640F is a 64Mb (8Mb x8 or 4Mb x16) nonvolatile memory that can be read,
erased, and reprogrammed. These operations can be performed using a single low voltage (2.7–3.6V) supply. On power-up, the memory defaults to read mode.
The memory is divided into blocks that can be erased independently so that valid data
can be preserved while old data is erased. Blocks can be protected in units of 256KB
(typically, groups of four 64KB blocks), to prevent accidental PROGRAM or ERASE commands from modifying the memory. PROGRAM and ERASE commands are written to
the command interface. An on-chip program/erase controller simplifies the process of
programming or erasing the memory by taking care of all of the special operations that
are required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error conditions identified. The command set required to
control the memory is consistent with JEDEC standards.
The device features an asymmetrical blocked architecture. The device has an array of
135 blocks: 8 parameters blocks of 8KB each (or 4 K words each) and 127 main blocks of
64KB each (or 32K words each)
M29W640FT contains the parameter blocks at the top of the memory address space.
The M29W640FB contains the parameter blocks starting from the bottom.
The M29W640F has an extra block, the extended block, of 128 words in x16 mode, or of
256 bytes in x8 mode, that can be accessed using a dedicated command. The extended
block can be protected. It is useful for storing security information. However, the protection is not reversible. Once protected, the protection cannot be undone.
CE#, OE#, and WE# signals control the bus operation of the memory. They enable simple connection to most microprocessors, often without additional logic.
VPP/WP enables faster programming of the device, enabling multiple word/byte programming. If this signal is held at V SS, the boot block and its adjacent parameter block
are protected from PROGRAM and ERASE operations.
The device supports asynchronous random read and page read from all blocks of the
memory array.
In order to meet environmental requirements, Micron offers the M29W640FT and the
M29W640FB in RoHS packages (lead-free). The category of second-level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC-Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the
inner box label.
The memory is delivered with all the bits erased (set to 1).
