脚位/封装 | SOJ-42 |
外包裝 | |
無鉛/環保 | 含鉛 |
電壓(伏) | 5.0 V |
溫度規格 | 0 C~+70 C |
速度 | 60 NS |
標準包裝數量 | |
標準外箱 |
GENERAL DESCRIPTION The 1 Meg x 16 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function identically to a single CAS# on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
MT4C1M16C3DJ-6-T | 11,000 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
AS4C1M16F-60JC | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-50JC/60JC | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60 | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60J | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60JC | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60JC | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60JC OE | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60JC SOJ-42 | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60JC T R | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60JC-T | SOJ-42 | 5.0 V | 60 NS | 0 C~+70 C |