Bilder dienen nur der Illustration
Hersteller-Nummer | K4H511638M-TCB0 |
Hersteller | SAMSUNG |
Produktkategorie | DDR1 SDRAM |
IC-Code | 32MX16 DDR1 |
Gehäuse | TSOP2(66) |
Verpackung | TRAY |
RoHS | Leaded |
Spannungsversorgung | 2.5 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 133 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 1st Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4H511638M-TCB0 | 1.658 | 09+ | Anfrage senden |
K4H511638M-TCB0 | 1.547 | 2007+ | Anfrage senden |
K4H511638M-TCB0 | 3.558 | 2006+ | Anfrage senden |
K4H511638M-TCB0 | 5.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4H511638A-TCB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638A-TLB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-TC/LB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-TCB | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-TCB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-TCB0000 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-TLB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-TLB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-UC/LB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-UCB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |