K4H511638M-TCB0

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4H511638M-TCB0
Hersteller SAMSUNG
Produktkategorie DDR1 SDRAM
IC-Code 32MX16 DDR1

Produktbeschreibung

Gehäuse TSOP2(66)
Verpackung TRAY
RoHS Leaded
Spannungsversorgung 2.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 133 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 1st Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4H511638M-TCB0 1.658 09+ Anfrage senden
K4H511638M-TCB0 1.547 2007+ Anfrage senden
K4H511638M-TCB0 3.558 2006+ Anfrage senden
K4H511638M-TCB0 5.000 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4H511638A-TCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638A-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TC/LB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB0000 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-UC/LB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-UCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C