K4H511638M-TCB0

Product Overview

IC Picture

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Manufacturer Part No K4H511638M-TCB0
Brand SAMSUNG
Item DDR1 SDRAM
Part No 32MX16 DDR1

Product Details

Package TSOP2(66)
Outpack TRAY
RoHS Leaded
Voltage 2.5 V
Temperature 0 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 1st Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4H511638M-TCB0 1,658 09+ Get Quote
K4H511638M-TCB0 1,547 2007+ Get Quote
K4H511638M-TCB0 3,558 2006+ Get Quote
K4H511638M-TCB0 5,000 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4H511638A-TCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638A-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TC/LB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB0000 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-UC/LB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-UCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C