Bilder dienen nur der Illustration
Hersteller-Nummer | K4H641638N-LCCCTSG |
Hersteller | SAMSUNG |
Produktkategorie | DDR1 SDRAM |
IC-Code | 4MX16 DDR1 |
Gehäuse | TSOP2(66) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 2.5 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 200 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 4M |
Bit Organization | x16 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 14th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4H641638N-LCCCTSG | 2.000 | 10+ | Anfrage senden |
K4H641638N-LCCCTSG | 100,000+ | 2000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
IS43R16400B-5TL | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
IS43R16400B-5TL-TR | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H641638N-LCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H641638N-LCCC-LOT 9 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H641638N-LCCCT | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H641638N-LCCCT00 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H641638Q-LCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |