K4H641638Q-LCCC
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4H641638Q-LCCC |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR1 SDRAM |
| IC-Code | 4MX16 DDR1 |
Produktbeschreibung
| Gehäuse | TSOP2(66) |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 2.5 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 200 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 4M |
| Bit Organization | x16 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 17th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4H641638Q-LCCC | 2.000 | 11+ | Anfrage senden |
| K4H641638Q-LCCC | 2.000 | Anfrage senden | |
| K4H641638Q-LCCC | 2.000 | 11 | Anfrage senden |
| K4H641638Q-LCCC | 1.308 | Anfrage senden | |
| K4H641638Q-LCCC | 1.700 | Anfrage senden | |
| K4H641638Q-LCCC | 2.000 | 1116+ | Anfrage senden |
| K4H641638Q-LCCC | 894 | 11+ | Anfrage senden |
| K4H641638Q-LCCC | 2.000 | 2010+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| IS43R16400B-5TL | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R16400B-5TL-TR | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCC-LOT 9 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCCT | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCCT00 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCCTSG | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |