K4H641638Q-LCCC

Product Overview

IC Picture

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Manufacturer Part No K4H641638Q-LCCC
Brand SAMSUNG
Item DDR1 SDRAM
Part No 4MX16 DDR1

Product Details

Package TSOP2(66)
Outpack
RoHS Leaded
Voltage 2.5 V
Temperature 0 C~+85 C
Speed 200 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Internal Banks 4 Banks
Generation 17th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4H641638Q-LCCC 2,000 11+ Get Quote
K4H641638Q-LCCC 2,000 Get Quote
K4H641638Q-LCCC 2,000 11 Get Quote
K4H641638Q-LCCC 1,308 Get Quote
K4H641638Q-LCCC 1,700 Get Quote
K4H641638Q-LCCC 2,000 1116+ Get Quote
K4H641638Q-LCCC 894 11+ Get Quote
K4H641638Q-LCCC 2,000 2010+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
IS43R16400B-5TL TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16400B-5TL-TR TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H641638N-LCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H641638N-LCCC-LOT 9 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H641638N-LCCCT TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H641638N-LCCCT00 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H641638N-LCCCTSG TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C