K4T1G084QE-HCE6/HCF7
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G084QE-HCE6/HCF7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 128MX8 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-60 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G084QE-HCE6/HCF7 | 30.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4T1G084QE-HCE6T | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-HCE6T00 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-HCLE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-HLE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-ZCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE/D-HCE6/0MJ/000 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE/QQ-HCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE/QQ-HCE600 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE/QQ-HCE6000 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QEHYE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |