MT48LC4M16A2P-7E:G

Produktübersicht

IC Picture

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Hersteller-Nummer MT48LC4M16A2P-7E:G
Hersteller MICRON
Produktkategorie SDRAM
IC-Code 4MX16 SD
Andere Bezeichnungen MT48LC4M16A2P-7E-G
MT48LC4M16A2P-7E:G TR
MT48LC4M16A2P-7EGTR

Produktbeschreibung

Gehäuse TSOP2(54)
Verpackung TAPE ON REEL
RoHS RoHS
Spannungsversorgung 3.3 V
Betriebstemperatur 0 C~+70 C
Geschwindigkeit 143 MHZ
Standard Stückzahl 1000
Abmessungen Karton
Number Of Words 4M
Bit Organization x16
Density 64M
Max Clock Frequency 133 MHz
Production Status Production
Package Material Pb-Free/RoHS-Plating
Product Family SDRAM/Mobile LPSDR
Version A2
Die Revision G

General Description The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 16,777,216-bit banks is organized as 4,096 rows by 1,024 columns by 4 bits. Each of the x8’s 16,777,216-bit banks is organized as 4,096 rows by 512 columns by 8 bits. Each of the x16’s 16,777,216-bit banks is organized as 4,096 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0–A11 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The SDRAM provides for programmable read or write burst lengths of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The 64Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation.

Verfügbare Angebote

Teilenummer Menge Datecode
MT48LC4M16A2P-7E:G 20.000 Anfrage senden
MT48LC4M16A2P-7E:G 2.517 Anfrage senden
MT48LC4M16A2P-7E:G 10.000 21+ Anfrage senden
MT48LC4M16A2P-7E:G 95 DC02 Anfrage senden
MT48LC4M16A2P-7E:G 1.268 201130+ Anfrage senden
MT48LC4M16A2P-7E:G 95 2 Anfrage senden
MT48LC4M16A2P-7E:G 1.248 201130+ Anfrage senden
MT48LC4M16A2P-7E:G 50 Anfrage senden
MT48LC4M16A2P-7E:G 500 08+ Anfrage senden
MT48LC4M16A2P-7E-G 2.000 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
EM638165TS-7 TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-7 TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-7 TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-7 TSOP 54 TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-7 X TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-70 TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-73.3V TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-7G TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-7G NBSP TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C
EM638165TS-7I TSOP2(54) 3.3 V 143 MHZ 0 C~+70 C