H5AN4G8NAFR-TRC
Product Overview
Images are for reference only
| Manufacturer Part No | H5AN4G8NAFR-TRC |
| Brand | SK HYNIX |
| Item | DDR4 SDRAM |
| Part No | 512MX8 DDR4 |
Product Details
| Package | FBGA-78 |
| Outpack | TRAY |
| RoHS | RoHS |
| Voltage | 1.2 V |
| Temperature | 0 C~+85 C |
| Speed | |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Operating Temperature | commercial temperature(0°C ~ 85°C) & normal power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| Die Generation | 2nd |
| No Of Banks | Non-TSV |
| Product Family | DRAM |
| Shipping Method | tray |
Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.