K4E160412C-FC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E160412C-FC50
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO

Product Details

Package TSOP2(24/26)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x4
Density 16M
Generation 4th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4E160412C-FC50 12,000 Get Quote
K4E160412C-FC50 10,000 2003+ Get Quote
K4E160412C-FC50 20,000 2003+ Get Quote
K4E160412C-FC50 6,988 2003+ Get Quote
K4E160412C-FC50 15,000 2003+ Get Quote
K4E160412C-FC50 10,455 03+ Get Quote
K4E160412C-FC50 5,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E170412D-FC50 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E170412D-FC50T00 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E170412D-TC50 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C