K4E661612C-TP50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E661612C-TP50
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names K4E661612C-TP50T

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature -40 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Bit Organization x16
Generation 4th Generation
Power Low Power

Available Offers

Description Qty Datecode
K4E661612C-TP50 6,500 Get Quote
K4E661612C-TP50 18,000 2000 Get Quote
K4E661612C-TP50 10,000 2003+ Get Quote
K4E661612C-TP50 20,000 2003+ Get Quote
K4E661612C-TP50 895 2000+ Get Quote
K4E661612C-TP50 18,000 Get Quote
K4E661612C-TP50 3,460 00+ Get Quote
K4E661612C-TP50 18,000 2000+ Get Quote
K4E661612C-TP50 20,700 Get Quote
K4E661612C-TP50 5,892 03+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E661612D-TL5 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612D-TL5000 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612D-TL50000 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612D-TP15 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612D-TP5 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612D-TP50T0 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612D-TP50T000 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612DT50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612DTL50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E661612DTP50T TSOP2(50) 5.0 V 50 NS -40 C~+85 C