K4H281638E-TCC4

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4H281638E-TCC4
Brand SAMSUNG
Item DDR1 SDRAM
Part No 8MX16 DDR1

Product Details

Package TSOP2(66)
Outpack
RoHS Leaded
Voltage 2.5 V
Temperature 0 C~+85 C
Speed 200 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 8M
Bit Organization x16
Density 128M
Internal Banks 4 Banks
Generation 6th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4H281638E-TCC4 10,000 2009+ Get Quote
K4H281638E-TCC4 10,000 Get Quote
K4H281638E-TCC4 12,000 Get Quote
K4H281638E-TCC4 6,000 Get Quote
K4H281638E-TCC4 6,988 2003+ Get Quote
K4H281638E-TCC4 20,000 2003+ Get Quote
K4H281638E-TCC4 5,580 03+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
IC43R16800-5T TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IC43R16800-5TG TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16800A-5TL TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16800A-5TL-TR TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16800C-5TL TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16800C-5TL-TR TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16800CC-5TL TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16800CC-5TL-TR TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16800E-5TL TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
IS43R16800E-5TL 128M DRA TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C