K4H561638E-TCB3

Product Overview

IC Picture

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Manufacturer Part No K4H561638E-TCB3
Brand SAMSUNG
Item DDR1 SDRAM
Part No 16MX16 DDR1

Product Details

Package TSOP2(66)
Outpack
RoHS Leaded
Voltage 2.5 V
Temperature 0 C~+85 C
Speed 166 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 16M
Bit Organization x16
Density 256M
Internal Banks 4 Banks
Generation 6th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4H561638E-TCB3 8,862 09+ Get Quote
K4H561638E-TCB3 13,000 Get Quote
K4H561638E-TCB3 9,600 Get Quote
K4H561638E-TCB3 9,600 02 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4H561638D-LCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-TCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-TCB30 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-TCB300 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-TCB3000 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-TLB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-TLB316MX16 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-TLBO TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-UCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H561638D-VCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C