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Manufacturer Part No | K4H561638J-UIB3 |
Brand | SAMSUNG |
Item | DDR1 SDRAM |
Part No | 16MX16 DDR1 |
Package | TSOP2(66) |
Outpack | |
RoHS | Leaded |
Voltage | 2.5 V |
Temperature | -40 C~+85 C |
Speed | 166 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 16M |
Bit Organization | x16 |
Density | 256M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4H561638J-UIB3 | 2,000 | 2009+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4H561638H-UPB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H561638J-LIB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H561638J-LPB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H561638J-UPB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
M13S2561616A-6T | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
M13S2561616A-6TG | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |