K4S510432B-UC75

Product Overview

IC Picture

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Manufacturer Part No K4S510432B-UC75
Brand SAMSUNG
Item SDRAM
Part No 128MX4 SD

Product Details

Package TSOP2(54)
Outpack
RoHS RoHS
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 128M
Bit Organization x4
Density 512M
Internal Banks 4 Banks
Generation 3rd Generation
Power Normal Power

GENERAL DESCRIPTION The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bitsynchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle cont rol with the use of system cl ock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Available Offers

Description Qty Datecode
K4S510432B-UC75 5,500 Get Quote
K4S510432B-UC75 1,003 Get Quote
K4S510432B-UC75 15,000 09+ Get Quote
K4S510432B-UC75 10,000 09+ Get Quote
K4S510432B-UC75 8,564 09+ Get Quote
K4S510432B-UC75 1,961 2007+ Get Quote
K4S510432B-UC75 2,855 2006+ Get Quote
K4S510432B-UC75 13,500 Get Quote
K4S510432B-UC75 8,564 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EDS5104ABATA75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA-7 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA-75-E TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA-A75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA075 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA7A TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ADTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S510432B-CL75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S510432B-TC75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C