Package | TSOP2(54) |
Outpack | |
RoHS | RoHS |
Voltage | 3.3 V |
Temperature | 0 C~+85 C |
Speed | 133 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 128M |
Bit Organization | x4 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 3rd Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bitsynchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle cont rol with the use of system cl ock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Description | Qty | Datecode | |
---|---|---|---|
K4S510432B-UC75 | 5,500 | Get Quote | |
K4S510432B-UC75 | 1,003 | Get Quote | |
K4S510432B-UC75 | 15,000 | 09+ | Get Quote |
K4S510432B-UC75 | 10,000 | 09+ | Get Quote |
K4S510432B-UC75 | 8,564 | 09+ | Get Quote |
K4S510432B-UC75 | 1,961 | 2007+ | Get Quote |
K4S510432B-UC75 | 2,855 | 2006+ | Get Quote |
K4S510432B-UC75 | 13,500 | Get Quote | |
K4S510432B-UC75 | 8,564 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
EDS5104ABATA75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
EDS5104ABTA-7 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
EDS5104ABTA-75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
EDS5104ABTA-75-E | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
EDS5104ABTA-A75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
EDS5104ABTA075 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
EDS5104ABTA7A | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
EDS5104ADTA-75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432B-CL75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432B-TC75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |