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Manufacturer Part No | K4S641633F-BN75 |
Brand | SAMSUNG |
Item | SDRAM MOBILE |
Part No | 4MX16 SD |
Package | FBGA-54 |
Outpack | |
RoHS | Leaded |
Voltage | 3.0V/3.3V |
Temperature | -25 C~+85 C |
Speed | 133 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 4M |
Bit Organization | x16 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 7th Generation |
Power | Low, i-TCSR |
Description | Qty | Datecode | |
---|---|---|---|
K4S641633F-BN75 | 1,000 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4S641633HBN750JR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633HBN75TLF | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633HR75BGA | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633HRBLF1 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633HRL75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633K-BN750 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633K-BN750JR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |