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Manufacturer Part No | K4T1G084QE-HCE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 128MX8 DDR2 |
Alternate Names | K4T1G084QE-HCE60 |
K4T1G084QE-HCE600 | |
K4T1G084QE-HCE6000 | |
K4T1G084QE-HCE60000 | |
K4T1G084QE-HCE6T | |
K4T1G084QE-HCE6T00 |
Package | FBGA-60 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4T1G084QE-HCE6 | 116 | 1104+ | Get Quote |
K4T1G084QE-HCE6 | 3,840 | 10+ | Get Quote |
K4T1G084QE-HCE6 | 272 | 10+ | Get Quote |
K4T1G084QE-HCE6 | 3,840 | 10 | Get Quote |
K4T1G084QE-HCE6 | 5,660 | Get Quote | |
K4T1G084QE-HCE6 | 12,500 | Get Quote | |
K4T1G084QE-HCE6 | 100 | Get Quote | |
K4T1G084QE-HCE6 | 4,789 | 2012+ | Get Quote |
K4T1G084QE-HCE6 | 5,000 | 9 | Get Quote |
K4T1G084QE-HCE6 | 2,440 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
MT47H128M8THK-3 ES:D | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8THK-37E ES:B | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8THK-37E ES:D | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8THK-37E:B | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8THK-37E:D | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8THK-3:B | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8THK-3:D | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
W971GG8JB-3 | TFBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |