K4T1G084QE-HCE6

Product Overview

IC Picture

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Manufacturer Part No K4T1G084QE-HCE6
Brand SAMSUNG
Item DDR2 SDRAM
Part No 128MX8 DDR2
Alternate Names K4T1G084QE-HCE60
K4T1G084QE-HCE600
K4T1G084QE-HCE6000
K4T1G084QE-HCE60000
K4T1G084QE-HCE6T
K4T1G084QE-HCE6T00

Product Details

Package FBGA-60
Outpack
RoHS RoHS
Voltage 1.8 V
Temperature 0 C~+85 C
Speed 667 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 128M
Bit Organization x8
Density 1G
Internal Banks 8 Banks
Generation 6th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4T1G084QE-HCE6 116 1104+ Get Quote
K4T1G084QE-HCE6 3,840 10+ Get Quote
K4T1G084QE-HCE6 272 10+ Get Quote
K4T1G084QE-HCE6 3,840 10 Get Quote
K4T1G084QE-HCE6 5,660 Get Quote
K4T1G084QE-HCE6 12,500 Get Quote
K4T1G084QE-HCE6 100 Get Quote
K4T1G084QE-HCE6 4,789 2012+ Get Quote
K4T1G084QE-HCE6 5,000 9 Get Quote
K4T1G084QE-HCE6 2,440 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
MT47H128M8THK-3 ES:D FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8THK-37E ES:B FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8THK-37E ES:D FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8THK-37E:B FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8THK-37E:D FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8THK-3:B FBGA-60 1.8 V 667 MBPS 0 C~+85 C
MT47H128M8THK-3:D FBGA-60 1.8 V 667 MBPS 0 C~+85 C
W971GG8JB-3 TFBGA-60 1.8 V 667 MBPS 0 C~+85 C