K9F5608U0D9-JIB

Product Overview

IC Picture

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Manufacturer Part No K9F5608U0D9-JIB
Brand SAMSUNG
Item FLASH-NAND
Part No 32MX8 NAND SLC

Product Details

Package FBGA-63
Outpack TRAY
RoHS RoHS
Voltage 2.7V-3.6V
Temperature -40 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton

GENERAL DESCRIPTION Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8capacity. The device is offered in 1.8V, 2.7V, 3.3tsVcc. I NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as comm and input. The on-chip write control automates all program and er ase functions including pulse repetition, where required, and in ternal verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608X0D′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K9F5608U0B-HIB000 FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0B-JIB0 FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0C-GIB0 FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0C-HIB0 FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0C-JIB FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0C-JIB0 FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0C-JIB0000 FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0C-JIB01 FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0C-JIB0T00 FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C
K9F5608U0C-JIBO FBGA-63 2.7V-3.6V 50 NS -40 C~+85 C