M29W160FT-90 N1

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No M29W160FT-90 N1
Brand MICRON
Item FLASH-NOR
Part No 29LV160 TOP

Product Details

Package TSOP-48
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+70 C
Speed 90 NS
Std. Pack Qty
Std. Carton
Density 16M
Silicon Version F
Functionality Security Top boot (top blocks protected)

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V for access time of 80 ns and 70 ns, respectively). On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged, see Figures 4, 5, 6 and 7, Block addresses. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32 Kbyte block is a small Main Block where the application may be stored. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in TSOP48 (12 x 20 mm) and TFBGA48 (0.8 mm pitch) packages. The memory is supplied with all the bits erased (set to ’1’). In order to meet environmental requirements, Numonyx offers these devices in ECOPACK® packages. These packages have a Lead-free second-level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
M29W160AT-90N1 TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160BT-90N1T TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160BT90N1 TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160CT90N1 TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160DT-70,-90,N1T TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160DT-90(70)N1 TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160DT-90N1 TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160DT-90N1/70N1 TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160DT-90N1L TSOP-48 3.3 V 90 NS 0 C~+70 C
M29W160DT-90N1TR TSOP-48 3.3 V 90 NS 0 C~+70 C