| 脚位/封装 |
TSOP2(44/50)
|
| 外包装 |
TRAY
|
| 无铅/环保 |
含铅
|
| 电压(伏) |
5.0 V
|
| 温度规格 |
0 C~+85 C
|
| 速度 |
60 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Bit Organization |
x16
|
| Generation |
5th Generation
|
| Power |
Low Power
|
DESCRIPTION
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K
Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features
of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-
refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro-
cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,
personal computer and portable machines.
