K4H280838E-TCB0
产品概述
图片仅供参考
| 制造商IC编号 | K4H280838E-TCB0 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR1 SDRAM |
| IC代码 | 16MX8 DDR1 |
| 共通IC编号 | K4H280838E-TCB00 |
| K4H280838E-TCB000 | |
| K4H280838E-TCB0000 |
产品详情
| 脚位/封装 | TSOP2 |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 2.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 133 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 16M |
| Bit Organization | x8 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Generation | 6th Generation |
| Power | Normal Power |
库存
| IC 编号 | 数量 | 单价 (USD) | 生产年份 | 附记 | |
|---|---|---|---|---|---|
| K4H280838E-TCB000 | 126 | 0319 | AB库存 | 索取报价 |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4H280838E-TCB000 | 126 | 索取报价 | |
| K4H280838E-TCB000 | 10,000 | 17+ | 索取报价 |
| K4H280838E-TCB000 | 126 | 0319 | 索取报价 |
| K4H280838E-TCB0 | 10,000 | 2009+ | 索取报价 |
| K4H280838E-TCB0 | 1,478 | 2007+ | 索取报价 |
| K4H280838E-TCB0 | 5,538 | 2006+ | 索取报价 |
| K4H280838E-TCB0 | 10,000 | 索取报价 | |
| K4H280838E-TCB0 | 12,000 | 索取报价 | |
| K4H280838E-TCB0 | 6,000 | 索取报价 | |
| K4H280838E-TCB0000 | 355 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4H280838A-TCB0 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838A-TLB0 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838B-TCB0 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838B-TCB00 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838B-TCB000 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838B-TCB0000 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838B-TLB0 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838BTLBO | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838C-TCB0 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H280838C-TCB00 | TSOP2 | 2.5 V | 133 MHZ | 0 C~+85 C |