K4H511638M-TLB0

产品概述

IC Picture

图片仅供参考

制造商IC编号 K4H511638M-TLB0
厂牌 SAMSUNG/三星
IC 类别 DDR1 SDRAM
IC代码 32MX16 DDR1

产品详情

脚位/封装 TSOP2(66)
外包装 TRAY
无铅/环保 含铅
电压(伏) 2.5 V
温度规格 0 C~+85 C
速度 133 MHZ
标准包装数量
标准外箱
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 1st Generation
Power Low Power

供应链有货

IC 编号 数量 生产年份
K4H511638M-TLB0 1,145 09+ 索取报价
K4H511638M-TLB0 1,547 2007+ 索取报价
K4H511638M-TLB0 3,558 2006+ 索取报价

FFFE/互通料号 (形式，腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
K4H511638A-TCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638A-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TC/LB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB0000 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-UC/LB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-UCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C