图片仅供参考
制造商IC编号 | K4T1G164QD-ZCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX16 DDR2 |
共通IC编号 | K4T1G164QD-ZCE60 |
K4T1G164QD-ZCE6000 |
脚位/封装 | FBGA-84 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 5th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G164QD-ZCE6 | 4,000 | 索取报价 | |
K4T1G164QD-ZCE6 | 626 | 0825+ | 索取报价 |
K4T1G164QD-ZCE6 | 12,800 | 2010+ | 索取报价 |
K4T1G164QD-ZCE6 | 2,000 | 2009+ | 索取报价 |
K4T1G164QD-ZCE6 | 10,000 | 2010+ | 索取报价 |
K4T1G164QD-ZCE6 | 2,240 | 10+ | 索取报价 |
K4T1G164QD-ZCE6 | 10,000 | 索取报价 | |
K4T1G164QD-ZCE6 | 2,568 | 2007+ | 索取报价 |
K4T1G164QD-ZCE6 | 685 | 2007+ | 索取报价 |
K4T1G164QD-ZCE6 | 2,257 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G160C2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |